Abstract
AbstractGallium‐doped Bi2Te3 single crystals were prepared by means of a modified Bridgman method. Temperature dependences of the Hall constant RH(B ∥ c), electrical conductivity σ⊥c and Seebeck coefficient S(Δ T ⊥ c) were measured on the samples of these crystals in the temperature interval of 100–400 K. The variations of the investigated transport coefficients with increasing Ga content in the samples showed that Ga atoms in the Bi2Te3 crystal lattice behave as donors. This effect is qualitatively explained on the basis of a model of point defects in Bi2Te3(Ga) crystals; singly ionised gallium atoms in interstitial sites; Gai, are considered to be the most probable defects.
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