Abstract
A ten-stacked self-assembled InAs/GaAs quantum dot (QD) infrared photodetector is investigated. A wide detection window of 2–10 μm is observed with a peak responsivity of 187 mA/W at 7 μm under an applied voltage of 1.1 V. The observed negative differential conductance (NDC) of the photocurrent at low temperature is attributed to the formation of high-field domains and the resultant intervalley scattering in the GaAs barrier layer. The disappearance of the NDC and the increase of single-QD photoluminescence intensity with increasing temperature below 100 K are attributed to the thermally assisted electron redistribution with increasing temperature.
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