Abstract
The influence of the applied gate voltage on the coherent propagation of the conduction electrons through the InGaAs/InP core-multishell nanowires with the surrounding gate is considered. The solution of the threedimensional Schrodinger equation within the eective mass approximation is found using the adiabatic method. The electrostatic potential distribution generated by the all-around gate is determined from the self-consistent procedure applied to the Schrodinger‐Poisson problem. The Landauer‐Buttiker formalism and quantum transmission boundary method are applied to calculate the transport properties of the considered nanosystem.
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