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Abstract
We are reporting the electric transport properties of Bi2Sr2Ca2Cu3O10+δ (Bi-2223) single-crystal whiskers in ab-plane and c-axis. We fabricated a stack with in-plane area of 2 μm x 2 μm and height of approximately 300 nm using focused ion beam (FIB) etching method, which has two hundred of elementary junctions in c-axis. Sharp and single phase transition in ab-plane (Tc ≈ 108 K) shows high crystallinity of single crystal whiskers. We also measured current (I) – voltage (V) characteristics in c-axis at 30 K and estimated critical current density of 1x103 A/cm2. A well defined voltage gap (Vg ≈ 2 V) also exists in I-V characteristics, which corresponds to number of elementary Josephson junctions.
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