Abstract
The epitaxial growth and properties of Nd 1+ x Ba 2− x Cu 3O y (NdBCO) thin films using pulsed-laser deposition are reported. Thin films on single crystal LaAlO 3 having T c0=93 K and J c ( H=0, T=77 K)=3 MA/cm 2 were reproducibly fabricated. NdBCO films were subsequently grown on textured Ni substrates on which a YSZ/CeO 2 buffer-layer architecture was previously deposited by the same PLD technique. X-ray diffraction data showed a high degree of in-plane and out-of-plane alignment for the different layers of these coated conductors. Electron diffraction analysis of the NdBCO film revealed dense morphology and low-angle grain boundaries (≤3°). Direct current transport measurements yielded a J c of about 300 kA/cm 2 at zero field and 77 K. J c dependence on the field intensity and orientation revealed enhanced pinning at high fields with respect to YBCO and NdBCO films on LaAlO 3.
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