Abstract
We have fabricated III–V semiconductor quantum wires which display a variety of novel transport and optical phenomena. For the definition of structures with widths down to 40 nm high resolution electron beam lithography and dry etching have been used. For the observation of dimensionality dependent effects in optical spectra buried quantum wires have been developed by overgrowth of dry etched structures and implantation induced intermixing. The physical properties of the nanometer structures have been analyzed by magnetotransport studies and emission spectroscopy.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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