Abstract
Tin selenide (SnSe) films were grown by the hot-wall epitaxy (HWE) technique on glass, mica and KCl substrates. The electrical resistivity and Hall mobility of the films grown on mica and KCl were found to be quite close to the bulk SnSe values. Optical absorption measurements indicated an indirect energy bandgap of about 1 eV and a direct gap of about 1.2 eV.
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