Abstract
The samples of Au/(Si/SiO2)/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the I–V curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films., The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.
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