Abstract
We employ a four-band continuum model to study the transport and confinement in an n-p-n junction in bilayer chiral borophene for both the identical- and opposite-chirality configurations. We demonstrate the existence of topological states in a domain wall between domains of opposite-chirality bilayer chiral borophene with reversed layer stacking. An interlayer bias modifies the conductance of the identical-chirality configuration but not that of the opposite-chirality configuration, and it induces a layer localization of the bound and topological states. Our findings suggest paths toward utilization of the layer degree of freedom in bilayer chiral borophene in future electronic devices.
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