Abstract
Defect concentration and charge density profiles are derived for a mixed conductor MO 1+δ with two carriers under a small chemical potential gradient. The description starts from the formulation of the flux equations for the diffusing species of relevance (e.g. O 2− and 2e − in an oxide), takes account of the Poisson equation and is restricted to dilute systems and linear regime. Several examples are discussed in detail: (i) it is shown analytically that chemical diffusion involving carriers with different diffusion coefficients leads to a kinetic build-up of subsurface space charges; (ii) the influence of sluggish surface reactions on the steady state flux and the concentrations profiles is studied on both a “black box” and a mechanistic level; (iii) the impact of different prototype grain boundaries (amorphous blocking core, depletion of carriers in adjacent space charge layers) on chemical diffusion is treated in detail numerically.
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