Abstract
Wide-gap chalcopyrite CuGaSe 2 thin-film photovoltaics are fabricated on a noble dot-patterned Mo pelectrode for use as the top cell in high-efficiency tandem photovoltaics. Device characteristics of these CuGaSe 2 cells are compared with those of cells directly formed on a transparent conductive oxide film. The Mo-dot p-electrode enables high temperature deposition of the CuGaSe 2 thin film, and the maximum efficiency increased by about 1 percentage point due to improvements in open-circuit voltage and fill factor. The microscopic interfacial structure between CuGaSe 2 and the Modot p-electrode is investigated using transmission electron microscopy.
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