Abstract
Design and realization of high-performance transparent p-n heterojunctions are needed for the development of transparent electronic technology. In this study, we report the rectification behavior of transparent p-n heterojunctions based on solution-processed p-type CuCrO2 and n-type In2O3 thin films. The performance of heterojunction is improved by changing the annealing temperature of In2O3 thin film. The optimized p-n diode shows high rectification rate of 1.41 × 104 (at ± 3 V) and an ideal factor of 3.9 while maintain visible transmittance exceeding 60%. The conduction mechanism is dominated by space-charge limited conduction in the heterojunction. The results will give impetus to the application of delafossite oxide-based diodes in transparent electronics.
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