Abstract
Using the diffusivity discrepancy between Al and N in the SnO2 phase, N-doped n+ and Al-doped p+ degenerate regions were created at the interface by annealing an AlN/SnO2 bilayer. Current–voltage (I–V) characteristics of the p+-AlN:SnO2/n+-SnO2 junction indicate distinct tunnel diode characteristics, such as the tunneling mode, negative differential resistance, and turn-on mode. The overall transmittance of the p-AlN:SnO2/n-SnO2 tunnel diode is higher than 80% in the visible region. In a certain wavelength region, the transmittance of the p-AlN:SnO2/n-SnO2 tunnel diode is even higher than 90%. This shows that a transparent p-AlN:SnO2/n-SnO2 tunnel diode has great potential for use in a broad range of invisible electronics.
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