Abstract
Transparent organic thin-film transistors (OTFTs) with high performance are demonstrated by using high quality polycrystalline 5,6,11,12-Tetraphenylnaphthacene (rubrene) as an active layer, which is prepared by weak epitaxy growth (WEG) method. Benefiting from epitaxial relationship is formed between the inducing layer and the rubrene films, highly oriented and continuous organic polycrystalline thin films with large grains were obtained, which enhances the carrier transport in the film plane. The mobility of devices reaches 1.3cm2/Vs, the threshold voltage is lower than −0.9V and the on–off current ratio (Ion/Ioff) is higher than 106 after the photolithography process. Moreover, the array consisting of the transparent thin-film transistors displays a high optical transparency more than 65% in visible light regions. The high-performance transparent OTFTs promote the practical applications for large-area and flexible active-matrix organic light-emitting diodes (AMOLEDs) display.
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