Abstract
The authors report the growth and characterization of single-crystalline, degenerately Sb-doped SnO2 (SnO2:Sb) nanowires. The in situ doped SnO2:Sb nanowires are transparent conductors with resistivities down to 4.1×10−4Ωcm and failure-current densities up to 2.1×107A∕cm2. High carrier concentrations (>1020cm−3) and minimal environmental effects were also observed and attributed to effective Sb doping. The SnO2:Sb nanowires can be obtained at large quantities using a low-cost vapor transport method and may provide a suitable alternative to indium tin oxide as transparent conducting oxide materials. Field emission devices with SnO2:Sb nanowire cathodes and anodes exhibited an ultralow turn-on voltage of 2V.
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