Abstract
The surface work function of transparent conducting oxides is a critical parameter influencing device efficiency by controlling charge transport across interfaces. In this study, Al-doped CdO films were deposited on glass substrates by rf magnetron sputtering with and without oxygen flow. For Al-doped CdO films deposited with (without) oxygen flow, we measure the high (low) surface work function close to 5.4 (4.6)eV. Our results suggest a method for fabricating Al-doped CdO electrodes with large, tunable work functions that could be relevant in designing electrodes for improving the performance of optoelectronic and electronic devices.
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