Transparent-flexible thermoelectric module from In/Ga co-doped ZnO thin films

Abstract

Transparent-flexible thermoelectric thin films have immense potential as power supplies for future small-sized consumer electronics, the internet of things, and wearable devices. Here, we report the thermoelectric properties of dual Ga and In doped ZnO films (IGZO) deposited on a polyimide substrate with post-thermal treatment in vacuum along with fabricating 4-unileg flexible IGZO thermoelectric devices. All the as-deposited and annealed IGZO films are the preferred (002) orientation and under tensile stress. The post-thermal treatment controls the dopant substitution/diffusion in the host ZnO lattice affecting the film crystallinity, residual stress, and thermoelectric properties. Among the films, the IGZO film annealed at 250 °C has the best power factor of 16.9 μWm−1K−2 with the largest crystal size, lowest tensile stress, highest carrier concentration, and lowest density-of-state effective mass. The practical application of flexible IGZO films was also reported via a 4-unileg-IGZO films thermoelectric module, which achieved an output power about 3.2 nW at ΔT = 120 K.