Abstract

Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I on ) in μA range, high on/off current ratio (I on /Ioff), high field effect mobility, and uniform threshold voltage(V t ). In this study, we demonstrate fully-transparent high-performance and high-yield thin film transistors based on random growth of single-walled carbon nano tube (SWNT) network that are easy to fabricate., These SWNT-based transparent thin film transistors show excellent electrical and optical characteristics and unlike the devices previously reported they do not require electrical burning to achieve high on/off current ratios.

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