Abstract
Transparent conductive oxide-less dye-sensitized solar cells with back contact Ti electrodes covered by thin compact titanium nitride (TiN) layer were studied. The TiN compact layer was fabricated on the surface of Ti wire by exposing Ti wires to laser under nitrogen atmosphere. The photovoltaic performance was improved after the compact TiN blocking layer was fabricated on the Ti wire. These results were explained by the suppression of charge recombination between electrons in Ti wires and I3- in electrolytes by the TiN compact layer.
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