Abstract
In this work, GZO thin films were prepared by sol-gel process and spin coating technique. The XRD results showed the preferential c-axis orientation of the crystallites and the presence of the wurite phase of ZnO and it were suggested that the presence of Ga might be changed the d-spacing of ZnO to formation the Ga-doped zinc oxide. The effects of Ga amount on the conductivity and transparency were studied. The electrical resistivity for the GZO film doped 2 at% of Ga could be lowered to be 7.510-3Ω-cm with the calcination temperature was 550°C and hydrogen treatment was conducted in the Ar/H2 (97/3) atmosphere at 500°C. In addition, the optical transmittances of GZO thin films were higher than 90% in visible wavelength region.
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