Abstract
In this work, Nb-doped TiO2 films were deposited on glass substrates utilizing RF magnetron co-sputtering with a TiO2 target and a Nb target. In order to study the effect of Nb concentration, four groups of films with different Nb concentration were prepared and annealed in N2 at 500°C. Crystal structure, surface morphology, electrical and optical property of the films were characterized. The lowest resistivity was measured to be 1.2×10−3Ωcm at the Nb concentration of 7.0at.%. Meanwhile, Hall mobility and carrier density were 2.0cm2/Vs and 2.6×1021cm−3, respectively.
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