Abstract
Transparent conductive In 2O 3:Sn films 0.1–1 μm thick were deposited onto glass, mica and sapphire substrates by the pyrolytic decomposition of indium and tin acetylacetonates in a carrier gas (N 2) flow. The films had a low resistivity ( ϱ = (1.6–1.8)×10 -4 Ω cm ) and a high transparency in the visible region of the spectrum ( T = 90%–95%). The optical properties of the In 2O 3:Sn films were studied at wavelengths in the range 0.3–20 μm, and the major light absorption mechanisms were determined. The effect of post-deposition annealing on the composition and the structure of the films was investigated by electron X-ray microprobe analysis, Auger electron spectroscopy combined with depth profiling, X-ray diffractometry and scanning electron microscopy. The resistivity decreased by a factor of 3–5 after annealing, and this behaviour was related to an increase in the homogeneity of the film.
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