Abstract

This article has shown that the co-sputtering method and post-annealing treatment have successfully fabricated the transparent conductive distributed Bragg reflectors (TCDBR). The transparent conducting film, anatase Nb-doped TiO2 (TNO), which has a high refractive index can be combined with Al-doped ZnO (AZO) low refractive index transparent conducting films to make a TCDBR capable of transferring the current from electrode to semiconductor while still maintaining the advantage for the micro resonant cavity. The eight-period stack of AZO/TNO achieves a reflectivity of up to 90% centered at 550 nm and a resistivity of 1.88×10-3 Ω cm.

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