Transparent conducting ZnO:Al, In and Sn thin films deposited by the sol–gel method

Abstract

The effects of aluminum, indium and tin dopants on the microstructure and electrical properties of ZnO thin films prepared on silica glass substrates by the sol–gel method were investigated. As a starting material, zinc acetate dihydrate was used. 2-methoxyethanol and monoethanolamine were used as the solvent and stabilizer, respectively. The dopant sources were aluminum chloride, indium chloride and tin chloride. For each dopant, films doped with 1 at.% aluminum, 1 at.% indium and 2 at.% tin concentrations exhibited a stronger c-axis orientation perpendicular to the substrate and had larger grain, a high smooth surface morphology as well as high conductivity and transmittance than the others. In addition, the electrical resistivity value of ZnO thin films reduced by applying the second heat-treatment in nitrogen with 5% hydrogen. When the aluminum doping concentration was 1 at.%, the film had a columnar structure, a resistivity value of 1.1×10 −2 Ω cm and a transmittance higher than 90% in the visible spectra region.