Abstract
Transparent conducting antimony-doped tin oxide (ATO) films have been deposited on quartz glass substrates by pulsed laser deposition. Various process parameters including oxygen partial pressure, substrate temperature, film thickness and Sb-doping level are analyzed for their effects on the structure and optoelectronic characteristics of ATO thin films. Under optimized deposition conditions, electrical resistivity of 1.0×10−3Ω·cm, average optical transmittance of 84% in the visible region, and optical band-gap of 4.07eV are obtained for ATO thin films.
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