Transparent conducting oxide semiconductors for transparent electrodes

Abstract

The present status and prospects for further development of polycrystalline or amorphous transparent conducting oxide (TCO) semiconductors used for practical thin-film transparent electrode applications are presented in this paper. The important TCO semiconductors are impurity-doped ZnO, In2O3 and SnO2 as well as multicomponent oxides consisting of combinations of ZnO, In2O3 and SnO2, including some ternary compounds existing in their systems. Development of these and other TCO semiconductors is important because the expanding need for transparent electrodes for optoelectronic device applications is jeopardizing the availability of indium-tin-oxide (ITO), whose main constituent, indium, is a very expensive and scarce material. Al- and Ga-doped ZnO (AZO and GZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular, AZO thin films, with a low resistivity of the order of 10−5 Ω cm and source materials that are inexpensive and non-toxic, are the best candidates. However, further development of the deposition techniques, such as magnetron sputtering or vacuum arc plasma evaporation, as well as of the targets is required to enable the preparation of AZO and GZO films on large area substrates with a high deposition rate.