Abstract
AbstractIn this review, we briefly describe a recent research development of transparent conducting electrodes (TCEs) for next‐generation quantum dot‐based light‐emitting diodes (QDLEDs). Although sputtered Sn‐doped In2O3 (ITO) and chemically grown F‐doped SnO2 (FTO) electrodes have mainly been employed as transparent electrodes for QDLEDs, there have been great advances in TCE materials and fabrication processes. This review presents important characteristics of various TCE and applications in QDLEDs as a transparent cathode or anode. In particular, we will focus on characteristics of metal grids, metal nanowire, carbon nanotube, graphene, and hybrid electrodes for QDLEDs as promising alternatives to typical ITO and FTO electrodes. In addition, we discuss the current status of transparent conducting oxide‐based QDLEDs. By comparing the performances of QDLED with different TCEs, we suggest promising alternatives ITO or FTO electrodes.
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