Abstract
Wide band gap (4.6 eV) lanthanum doped SrSnO3 semiconductors of high electron mobility have potential applications in transparent oxide semiconductor technologies. However, there is a lack of data on the electrical properties of La:SrSnO3 both in single crystals and in thin films with an orientation other than (001). We show that after applying a modified metalorganic chemical vapor deposition method it is possible to deposit relaxed thick (001), (110) and (111) oriented La:SrSnO3 films on LaAlO3 and MgO substrates. Thin films on LaAlO3 substrates exhibit comparatively high charge carrier mobility values: µ100=71 cm2V−1s−1, µ110=72 cm2V−1s−1 and µ111=67 cm2V−1s−1. In this article, using the results of X-ray diffraction and crystallite orientation distribution modeling, as well as scanning and transmission electron microscopy data, the link between the obtained charge carrier mobility (µ100 ≈ µ110 > µ111) and film's microstructure and morphology is discussed.
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