Abstract
Polycrystalline silicon films are presently used as the semitransparent gate electrodes in front-illuminated charge-coupled device (CCD) and charge-injection device (CID) image sensors. The transmittance of air/SiO/SUB 2//polysilicon/SiO/SUB 2//Si structures is calculated in spectral region between 0.4 and 1.0 /spl mu/. A proper choice of the thicknesses of the oxide films can substantially increase the transmittance over a narrow wavelength band or over the entire wavelength region of interest.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
