Transmissionelectron microscopy study of crystal defects in ZnSe/GaAs(001)epilayers

Abstract

ZnSe thin films grown on GaAs(001) substrate by molecular beamepitaxy to a thickness of 2500 Å have been studied bytransmission electron microscopy (TEM). Three types of structuraldefect have been observed: (i) Triangle-shaped stacking faults,with the apex close to the interface, either isolated or paired.They are bounded by two different Shockley dislocations. (ii)Stacking faults generated from the surface of the ZnSe epilayer bymovement of a Shockley half-loop. (iii) An array of perfect misfitdislocations. Their Burgers vectors are inclined to the interface.Most of them lie along ⟨310⟩ directions; only a feware parallel to ⟨110⟩.