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Abstract
In this work we investigate electronic transport in a class of junctions based on graphene. The junctions consist of two parts: the first part is made of pristine graphene on a usual substrate (e.g. SiO2), while in the second part a strong Rashba spin-orbit coupling is additionally induced (e.g. by placing this part on a dierent substrate). Our main goal is to analyze the probabilities of transmission from the part with the Rashba spin-orbit coupling to the pristine one. We are especially interested in the spin polarization of the transmitted charge carriers. We find that the transmission through the junctions is spin-dependent. Therefore, an electric current flowing through the junction should be spin-polarized. This eect is robust against
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