Abstract

We present a theoretical study of the acoustic properties of graphene-semiconductor layered structures. The transmission coefficient for longitudinal acoustic waves through the structure is evaluated by using the usual transfer matrix method. We find that the finite thickness of the graphene layer can affect significantly the transmission spectrum of the proposed structure. The features of the sound transmittance depend strongly on the number of the graphene layers. For mul-ti-layer graphene-semiconductor structures, the sound transmission spectrum looks very similar to that for an ideal superlattice. For such structures, terahertz acoustic forbidden gap can be observed even when a thick semiconductor layer is considered. These results are the consequence of the Bragg’s condition for sound waves. This study is relevant to the exploration of the acoustic properties of graphene-based layered structures and to the application of graphene as high-frequency acoustic devices.

Highlights

  • It is known that graphene is a single layer of carbon atoms covalently bonded together in a honeycomb structure

  • We have studied theoretically the acoustic properties of graphene-semiconductor layered structures

  • 1) We have shown that graphene is a very thin material, the finite thickness of the graphene sheet should be considered in order to calculate rightly the transmission spectrum of the graphene-based layered structure

Read more

Summary

Introduction

It is known that graphene is a single layer of carbon atoms covalently bonded together in a honeycomb structure. SL-based high-frequency acoustic devices such as filters, mirrors, and resonators for sound waves have been realized experimentally [14] In these acoustic devices, normally the short-period SL structures are required in order to achieve a strong modulation of the acoustic properties by the presence of the hetero-material systems. Because the thickness of the graphene layer is in nanometer scale, graphene-based layered structure can be utilized to design and fabricate hypersonic devices in the THz regime Such structure gives us a freedom to engineer the graphenebased phononic crystal with, e.g., an acoustic band-gap and to study high-frequency elastic properties of the constituent material systems [17].

Theoretical Approach
Numerical Results and Discussions
Conclusions
Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.