Abstract
In this paper the finite element method (FEM) with higher order isoparametric elements have been employed to compute electrical representative parameters (like R, L and C, measured in PUL) of interconnects used in high-speed VLSI systems, especially in multichip modules (MCMs). Various 2-D VLSI interconnect/dielectric packaging structures involve infinite domain for analysis. Special quadrilateral infinite elements are being used to obtain parameters accurately. The singular points introduced by the sharp corners of signal conductor boundaries are specially treated to drastically reduce the number of degrees of freedom and computation time in implementing FEM by using special singular elements.
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