Abstract
We report on the crystal structure of epitaxial (Ga,Mn)N films with Mn=0.2% grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and room temperature ferromagnetism (Ms=0.76 emu/cm3, Hc=90 Oe). The additional diffraction spots are found in the zone axis of B=[11̄00] for the (Ga,Mn)N epilayer due to a single twin orientation in the closed packed hexagonal matrix. High-order Laue zone measurements reveal the expansion of lattice parameter a (3.1851–3.1865 Å) by doping Mn, demonstrating that Mn ions substitute for Ga ions in the (Ga,Mn)N.
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