Abstract
We have investigated the structural properties of InSb quantum dots (QDs) on top of GaSb and embedded in GaSb barrier layers. The InSb QDs were grown by molecular beam epitaxy (MBE) applying conventional growth conditions as well as a new multi-step MBE growth process consisting of deposition at a very low temperature, an annealing step and capping immediately after QD formation. Conventional MBE growth produces plastically relaxed large islands with low density. The modified MBE growth technique allows the growth of very dense, coherently strained and tiny InSb QDs with high structural perfection.
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