Abstract
The degradation mechanism and structural evolution of transparent ITO/Ag/ITO (IAI) multilayer films caused by rapid thermal annealing (RTA) were investigated by high resolution transmission electron microscopy (HRTEM) and synchrotron X-ray scattering analysis. The IAI multilayer with low sheet resistance of 9.51 Ω/square and high transmittance of 88.24% was significantly degraded after 600 °C RTA. Discontinuity, agglomeration of the embedded Ag layer at the interface region of the IAI multilayer, and oxygen diffusion through crystalline ITO grain boundaries into Ag layers led to electrical and optical degradation of the IAI multilayer. Using HRTEM analysis, the microstructures and interfaces of as-deposited and 600 °C annealed IAI multilayer films were compared to explain their electrical and optical degradation mechanisms.
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