Abstract
SnO2 thin film heteroepitaxially grown on a rutile (100) TiO2 single crystal substrate exhibits high-density interfacial misfit dislocations and related planar defects. The misfit dislocation network formed on the heterointerface consists mainly of two types of partial edge dislocations with Burgers vectors of 1/2[101] and 1/2[110], to fully relieve the lattice mismatch, and the dislocations inevitably involve inclined (101) and vertical (010) planar defects extending toward the film surface, respectively. Some of the (101) planar defects form wedge-shaped defects, and frequently accompany a single or multiply stacked (101) nanotwin lamellae. Another (011) type of planar defect originating at fused threading dislocations with 1/2[011] Burgers vectors is also detected by plan-view observation, showing the same crystallographic feature as (101) planar defects observed in the cross-sectional (010) projection. The dominant relaxation mechanism through partial edge dislocations suggests the low interfacial energy of the defect plane in the rutile structure, hindering the control of high crystallinity in rutile oxide thin films.
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