Abstract
The behavior of Si(100) surface defects induced by Fe contamination was studied with transmission electron microscopy. After annealing at 1150°C for 1 hour and a subsequent heat treatment at 850°C for 2 hours, Fe-containing precipitates were observed in Si substrate in close vicinity to the interface of Si and SiO2 formed during the annealing. One of these precipitates is identified as FeSi-type silicide. In addition, the inclusions which were confirmed to be Fe3O4 or γ-Fe2SiO4 were observed in the surface thermal SiO2 layer. These results demonstrate that Fe atoms diffuse into the Si substrate during annealing at 1150°C and precipitate at a Si/SiO2 interface, while Fe atoms left on the surface form inclusions in the surface SiO2 layer. Under an additional thermal oxidation at 1000°C, oxidation-induced stacking faults were formed. They were not decorated at all in contrast with those induced by Cu or Ni contamination.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
