Abstract

High resolution transmission electron microscopy, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and structural properties of Co2MnGe(13nm)/Al2O3(3nm)/Co(13nm) tunnel magnetic junctions (TMJs), deposited on various single crystalline substrates (a-plane sapphire, MgO(100) and Si(111)). They allow for providing a correlation between these magnetic properties and the fine structure investigated at atomic scale. The Al2O3 tunnel barrier is always amorphous and contains a large concentration of Co atoms, which, however, is significantly reduced when using a sapphire substrate. The Co layer is polycrystalline and shows larger grains for films grown on a sapphire substrate. The VSM investigation reveals in-plane anisotropy only for samples grown on a sapphire substrate. The FMR spectra of the TMJs are compared to the obtained ones with a single Co and Co2MnGe films of identical thickness deposited on a sapphire substrate. As expected, two distinct modes are detected in the TMJs while only one mode is observed in each single film. For the TMJ grown on a sapphire substrate, the FMR behavior does not significantly differ from the superposition of the individual spectra of the single films, allowing for a conclusion that the exchange coupling between the two magnetic layers is too small to give rise to observable shifts. For TMJs grown on a Si or on a MgO substrate, the resonance spectra reveal one mode which is nearly identical to the obtained one in the single Co film, while the other observed resonance shows a considerably smaller intensity and cannot be described using the magnetic parameters appropriate to the single Co2MnGe film. The large Co concentration in the Al2O3 interlayer prevents for a simple interpretation of the observed spectra when using Si or MgO substrates.

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