Abstract
The specific effects of lamp pulse annealings on the oxygen precipitates morphology and on the chromium precipitate formation during intrinsic gettering in Czochralski‐grown silicon were investigated by transmission electron microscopy. High‐low‐high gettering treatments were carried out after deposition of a chromium film onto the silicon substrates and a subsequent in‐diffusion anneal. In order to test the effect of a lamp pulse on the gettering effects, the chromium diffusion (980°C for 30 nm) has been performed either in a cold wall lamp furnace or in a classical quartz tube furnace. The effect of a shorter lamp pulse at a higher temperature (1200°C for 5 s) applied prior to the chromium diffusion was also tested. When no lamp pulse was used, the oxygen has precipitated into two forms, i.e. platelets and polyhedra, depending on the gettering cycle. However, chromium precipitates were observable only in the presence of the polyhedra and in that case the phase was unambiguously identified. Moreover, it was observed that the lamp pulse annealings used in this work, applied prior to the gettering sequence, produced a significant retardation of the oxygen precipitation together with the impediment of chromium precipitate growth.
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