Abstract
The ion and electron beam effects in polycrystalline phases of Ag2Se and its oxides produced by electroless deposition on a-Ge0.25 Se0.75 thin film (negative inorganic resist) surface were investigated by transmission electron microscopy and microprobe analysis. The disappearance of a few polycrystalline rings corresponding to Ag2Se and growth of needles of 300–5000 nm length and 7–50 nm width were observed when the resist was exposed to an ion dose which is less than the lithographic sensitivity of this inorganic resist. Interestingly, no needle growth was observed either in electron beam irradiated a-Ge0.25 Se0.75 films, or in ion beam exposed as deposited a- Ge0.25 Se0.75 films (positive resist).
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