Abstract
A technique is presented for preparing transmission electron microscope samples of gallium arsenide by a combination of chemical and electrolytic polishing. Both A(111) and B(1̄1̄1̄) as well as {100} surfaces of wafers obtained from two sources were examined by transmission electron microscopy after a variety of surface treatments. In general, B(1̄1̄1̄) and {100} surfaces were damaged more heavily than A(111) surfaces by mechanical polishing with 1-μ diamond. Aside from the surface damage the crystals were remarkably dislocation free, although precipitates of different kinds were observed. One type of precipitate clusters in the shape of tori, and can be revealed in the optical microscope by lightly electropolishing a mechanically polished wafer or by etching a polished wafer in the Sirtl etch. The other type of precipitate has contrast in the electron microscope similar to stacking faults, and may be due to an oxide of some type.
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