Abstract
Our study investigates optical transition energies in GaAs/AlGaAs quantum multiwell infrared photodetectors. These devices exploit transitions within subbands, necessitating accurate theoretical predictions to optimize their performance. We first determine the energetic positions of conduction minibands and investigate how band non-parabolicity influences the width of these minibands. Furthermore, we analyze the impact of non-parabolicity on transition probabilities within the quantum wells. Additionally, our study explores the transmission coefficient, which exhibits a decrease with increasing barrier height. This phenomenon affects electron transmission efficiency and is associated with quantum reflection processes. Higher barrier heights require greater energy for electrons to traverse, influencing device functionality. Understanding these factors is crucial for advancing the design and performance of GaAs/AlGaAs quantum multiwell photodetectors, offering insights into their operational limits and potential optimizations.
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