Abstract
In this paper, we theoretically investigate transmission and reflection properties of incident light through dielectric medium doped by GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5nm GaAs wells and 15-nm Al0.3 Ga0.7As barriers, grown by metal organic chemical vapor deposition. The destructive quantum interference is set up by a control pulse that couples to a resonance of biexcitons. We found that many-particle interactions such as biexciton binding energy and biexciton decoherence which are inherent in semiconductors can affect the transmission and reflection properties of incident light on the slab. We have also shown that simultaneous subluminal or superluminal transmission, reflection can be achievable at different frequencies of probe field.
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