Transmission and Reflection of Millimeter Waves in i-GaAs/n-GaAs Periodic Structures in Voigt Configuration

Abstract

Layered periodic semiconductor structures continue to attract attention, owing to the possibility of tailoring their bands of interaction with electromagnetic waves so as to fit the requirements of microwaveor optoelectronics [1-8]. The . symmetry of periodic structures (PS) comprised of isotropic materials is known to be uniaxial along the axis normal to the layers. Further reduction of symmetry occurs in steady magnetic fields, which leads to gyrotropy of the PS. This opens new possibilities of PS parameter control. Among the various experimental fieldand wave-vector orientations, in-plane propagation in the Voigt geometry is the most attractive, owing to its convenience for experimental realization and data analysis. The wave dispersion in magnetoactive PS composed of technologically advanced materials, such as GaAs, has been considered theoretically in [5,7] and other earlier studies. In this paper we present the first experimental results on millimeter wave transmission and reflection in PS of ... n-i-n-i-... type GaAs in the Voigt geometry, involving in-plane propagation. We compare the data with existing theory, with a view of using this approach for characterization of composite materials.