Abstract
Guided ion beam techniques are used to measure the cross sections as a function of kinetic energy for reaction of SiF 4 with O +( 4S) and O + 2 ( 2Π g, ν = O). Reactions of excited O + 2 ions are also examined and are found to react more efficiently than ground state ions. The major reactions are dissociative charge transfer processes, although O + also reacts to form OF + SiF + 3 efficiently and O + 2 reacts to form minor amounts of SiOF + x ( x = 1−3).
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