Abstract
AbstractAn analytical expression is developed for the transition probability per unit time for impact ionization by holes. The approach is based upon time dependent perturbation calculations and the Bloch functions for the states of electrons and holes. The threshold energy of ionization by holes is calculated for the valley L1 for the electron band structure of silicon. The results obtained for the probability are in good agreement with experimental results for threshold energy and theoretical results for the ionization probability.
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