Abstract
A large topological Hall effect was observed in Mn2PtSn epitaxial thin films. The non-hysteretic topological Hall resistivity can be attributed to the canted spins below the reorientation temperature, while the hysteretic topological resistivity in the vicinity of the zero field captures the trend of antiskyrmion formation. A decrease in thickness enhances the contribution of dipolar interactions, leading to an additional antiskyrmion-type signal above the reorientation temperature. The amplitudes of these topological signals are strongly modulated by the film thickness, providing pathways for developing antiskyrmion-hosting media via film engineering.
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