Abstract
Nanopores on silicon surface are fabricated by metal-assisted etching process. Temperature coefficient of resistance (TCR) of silicon changes from positive value into negative value after nanostructuring, and the value increases with etching duration, indicating a competition between lattice-vibration scattering mechanism and hopping (thermionic emission) mechanism in carrier transport in silicon material. The capability of modulating TCR is one of the major advantages of nanostructured silicon. High TCR of −2.84%/°C is obtained after etching for 7min. This value is as large as that of some heat sensitive materials used for uncooled IR detectors. Both diameter and depth of nanopores increase with etching duration.
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