Transition of domain walls induced by current in defect permalloy nanowires

Abstract

Artificial defect influence on transverse domain wall dynamics have been investigated in permalloy nanowires using micromagnetic simulation. For given defect geometry, it has been obtained that domain walls transit from transverse to vortex at depinning current. The transition provides a way to reveal the intrinsic properties of transverse and vortex domain walls. Moreover, the calculated results show that with the increase of defect width, depinning current reaches a maximum and then decreases. However, for angle dependent current, it decreases to a minimum value and then increases with angle. These results are helpful for fabricating defect geometry and have potential applications in designing magnetic storage devices.